摘要
研究了在P型单晶硅上扩散的N区发射极上选择性化学镀镍工艺,获得了较为优化的化学镀工艺过程,得到了均匀致密的镀层。其中针对单晶硅表面的特点,采取了浓酸浸泡和HF处理以及氯化钯的活化方法,使得镀层质量得以提高。进行了合金化处理温度对合金层的电阻率影响的研究,结果发现在N_2气氛下330℃的热处理将会促进具有最低方块电阻的Ni-Si合金的形成。在方块电阻为45Ω/□的发射极上,化学镀后得到了方块电阻为2Ω/□的Ni-Si合金层。
The process of electroless nickel plating on N emitter on boron doped single-crystal silicon was developed. In the process, two pretreatment methods, acid immersion and HF dipping were applied. The activation using palladium chloride provided the uniform and compact electroless plating Ni films. The effect of temperature of metallic alloying nick- el and silicon on the resistivity of Ni-Si alloy was studied. The result showed that when the thermal treatment was pro- cessed at 330℃ in N2 atmosphere, Ni-Si alloy films formed which present lowest sheet resistance comparing with other Ni-Si alloy, Through an optimal processing flow obtained, the Ni-Si alloy with sheet resistance 2Ω/□ are plated success- fully on N emitter with sheet resistance 45Ω/□on p-Si substrate.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2010年第5期625-629,共5页
Acta Energiae Solaris Sinica
基金
国家重点基础研究发展(863)计划(2006AA05Z405
2006AA04Z345)
关键词
单晶硅
电接触
化学镀
镍
single silicon
electronic contact
electroless plating
nickel
