摘要
采用Langmuir-Blodgett(LB)膜诱导沉积法制备聚3,4-乙烯二氧噻吩高度有序导电聚合物复合薄膜,研究了薄膜的导电性能并进一步研究薄膜在改善器件性能方面的作用。将其应用于有机电致发光二极的空穴缓冲层,将聚3,4-乙烯二氧噻吩聚苯乙烯磺酸复合LB膜沉积于铟锡氧化物(ITO)电极上,制备了以复合LB膜为空穴缓冲层的有机电致发光二极。发现复合LB膜改善了器件性能(启动电压降低、最大亮度增加),但进一步的研究表明,LB膜器件在一定时间后出现性能劣化,X射线反射率(XRR)分析表明薄膜的结构发生一定程度的改变,是导致器件性能变差的可能原因。
Due to its high conductivity and stability,good optical transparency characteristics and easy synthesis,poly（3,4-ethylenedioxythiophene）（PEDOT）has wide application prospects in the antistatic coating,organic,display device,energy storage transformation,sensor,etc.in recent years.A Langmuir-Blodgett（LB）inducing method was firstly used to prepare single layer and multilayer conducting composite poly（3,4-ethylenedioxythiophene）-poly（styrenesulfonate）（PEDOT-PSS）film.The application of PEDOT nanostructure to improving organic electric device performance of organic light-emitting diode（OLED）was studied.Furthermore,this conducting polymeric LB film was utilized as the hole transfer layer in the OLED device,and efficiency enhancement by carrier injection was observed,which was ascribed to the ordered structure of this film.However,further investigation showed that this PEDOT-PSS film had inferior structure ability.
出处
《化工学报》
EI
CAS
CSCD
北大核心
2010年第6期1582-1586,共5页
CIESC Journal
基金
国家自然科学基金项目(60372002)~~
