摘要
本文报导了掺杂与不掺杂Bi_4Ge_3O_(12)(BGO)晶体的烈释光的测定;探讨了热释光与辐照剂量、掺杂条件和样品退火的关系;提出了BGO热释光的机制;并讨论了热释光与辐照损伤之间的联系。
The study of thermoluminescence of BGO (Bi_4Ge_3O_(12)) and itsdependence on radiation dose, doping and annealing of sample are reported.The mechanism of the thermoluminescence has been proposed, and the corre-lation between the thermoluminescence and the radiation damage effect hasalso been studied in this paper.
出处
《人工晶体学报》
EI
CAS
CSCD
1990年第4期324-330,共7页
Journal of Synthetic Crystals
关键词
锗酸铋
晶体
热释光
辐照损伤
Bi_4Ce_3O_(12) crystal
Thermoluminescence
rediation damage
