摘要
本文分析高纯材料的纯度标志的随意性缺点,提出了生产厂家必须标明生产方法和按不同的级别标出已测定的阳、阴离子杂质和基体组成。同时,根据杂质对晶体生长的影响,提出各类晶体原料应当测试分析的阳、阴离子杂质,以及某些原料基体偏离化学计量比组成。从而使晶体生长时能够选择恰当纯度的原料,既限制“有害杂质”浓度,又可适当放宽“无害杂质”浓度,达到降低成本,提高质量的目的。
The random defects in the purity symbolization for high purityraw materials for crystal growth are discussed and a more strict symbolizationsystem is proposed.It is required that the producers of raw materials mustindicate the methods of preparation,the cation and anion impurities as wellas the deviation of the matrix components of raw materials from the stoichiometriccomposition on the grade labelling.Thereby crystal growers can properlychoose raw materials on the basis of restricting the pernicious impurities andrelaxing the harmless impurity concentration,and obtain high quality crystalswith lower costs.
出处
《人工晶体学报》
EI
CAS
CSCD
1990年第1期84-90,共7页
Journal of Synthetic Crystals
关键词
晶体生长
原料
纯度
raw materials for crystal growth
purity
symbolization for raw materials
