摘要
本文应用高分辨率多重晶多次反射Ｘ射线衍射仪（Ｈｉｇｈ－ＲｅｓｏｌｕｔｉｏｎＭｕｌｔｉｐｌｅ－ＣｒｙｓｔａｌＭｕｌｔｉｐｌｅ－ＲｅｆｌｅｃｔｉｏｎＤｉｆｒａｃｔｏｍｅｔｅｒ，ＨＲＭＣＭＲＤ）研究了粘接后的ＧａＡｓ／ＧａＡｌＡｓ／玻璃结构．利用倒易空间衍射图的方法评价粘接后的晶体质量，给出了倒易空间衍射的三维强度分布图．结果表明，粘接过程中较大的应力将使应变的非四方畸变加剧，同时生长方向的应变产生较大的变化．这都将在晶体内部产生缺陷，影响器件的光电特性．成功的粘接样品表明，应变造成摇摆曲线的半峰宽（ＦＷＨＭ）约７０″，沿晶体生长方向的应变变化较小。
Abstract The high resolution multiple crystal multiple
reflection diffractometer (HRMCMRD) has been used to study the structure of GaAs/GaAlAs layer
bounded to glass. The reciprocal space mapping has been developed to evaluate the crystal
quality after the bounding, while, the reciprocal space 3 D intensity profiles are employed. It is
shown that the relatively strong stresses due to the bounding increase the untetragonal
distortion and cause the variation of the lattice parameter perpendicular to the crystal surface.
All of these will bring about the defects in GaAs/GaAlAs layer which might be harmful to its
photoelectric properties. The well bounded sample suggests that the width of the rocking cure is
about 70 arc sec and the strain perpendicular to the crystal surface has a little change , and the
shape of the reciprocal space 3 D profile is symmetry.
