摘要
利用2.0—2.5MeV He的弹性反冲探测方法,测量了二氧化硅和氮化硅膜层中的氢分布,并给出氢含量与淀积工艺条件的关系.讨论了在给定的实验条件下最大的探测深度、探测灵敏度极限和深度分辨率.
The elastic recoil detection (ERD) by using a 2.0—2.5 MeV ~4He, ion beam has been employed to detect the depth profiling of hydrogen in the Silicon oxide and silicon nitride films. The correlation between the hydrogen content and the deposition condition is given. Maximum probing depth, detection limit and depth resolution are discussed under our experiment conditions.
出处
《高能物理与核物理》
CSCD
北大核心
1989年第6期481-486,共6页
High Energy Physics and Nuclear Physics
基金
中国科学院科学基金
