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1.9～5.7GHz宽带低噪声BiCMOS LC VCO

1.9～5.7 GHz Wide-Band and Low-Noise LC VCO Using BiCMOS Technology
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摘要 设计了一种宽带、低相位噪声差分LC压控振荡器(VCO)。所设计的电路采用开关电容阵列和开关电感,实现了多波段振荡输出。对负阻环节跨导进行了优化设计,将热噪声控制在最小范围内,同时采用高品质因数片上螺旋电感,以减小电路的噪声干扰。采用台积电(TSMC)0.35μmSiGe BiCMOS工艺制作了流片,并进行了仿真和硬件电路实验。实测结果表明,当调谐电压为0～3.3 V时,可设定VCO工作在6个波段(1.9～2.1 GHz,2.1～2.4 GHz,2.4～3.0 GHz,3.0～3.4 GHz,3.4～4.2 GHz,4.2～5.7 GHz),此6波段连续可调,构成了1.9～5.7 GHz宽带VCO;VCO的中心频率为2.4 GHz、偏离中心频率为1 MHz时实测相位噪声为-111.64 dBc/Hz;在3.3 V电源电压下实测核静态电流约为1.8 mA,从而验证了宽带、低噪声BiCMOS LC VCO设计方案之正确性。 A wide-band low phase noise differential LC voltage controlled oscillators was designed.Wide-band oscillation output was realized using switched-capacitor array and switched inductor.The tranconductance of the negative resistance was optimized to minimize the thermal noise.The high-quality factor on-chip spiral inductor was also used to reduce the phase noise of the designed circuit.The chip was made using standard 0.35 μm SiGe BiCMOS process from TSMC.The simulation and testing experiment of the designed LC VCO circuit were carried out.The test results show that the VCO can be turned using a DC voltage of 0 to 3.3 V for 6 different frequency bands（1.9-2.1 GHz,2.1-2.4 GHz,2.4-3.0 GHz,3.0-3.4 GHz,3.4-4.2 GHz,4.2-5.7 GHz）.These 6 tunable bands are continuous,thus the range of 1.9～5.7 GHz broadband VCO is constituted.The test phase noise is-111.64 dBc/Hz at 1MHz offset the carrier frequency when center frequency at 2.4 GHz and the test static current of VCO core is about 1.8 mA at 3.3 V supply voltage.This work verifies the correctness of the designed VCO.
作者 刘建峰 成立 杨宁 周洋 凌新 严鸣
机构地区 江苏大学电气与信息工程学院 南通职业大学电子工程系 镇江市
出处 《半导体技术》 CAS CSCD 北大核心 2010年第5期473-477,共5页 Semiconductor Technology
基金 国家"863"计划引导项目(2006AA10Z258)
关键词 锗硅双极互补金属氧化物半导体模拟集成电路 LC压控振荡器 宽带 相位噪声 SiGe BiCMOS analog IC LC voltage controlled oscillator wide-bank phase noise
分类号 TN752 [电子电信—电路与系统]
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参考文献8

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二级参考文献10

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半导体技术
2010年 第5期

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