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Optical and structural properties of sol-gel derived nanostructured CeO_2 film 被引量:1

Optical and structural properties of sol-gel derived nanostructured CeO_2 film
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摘要 Sol-gel derived nanostructured CeO_2 film was deposited on glass substrate using by dip-coating technique with annealing at 650℃.X-ray diffraction(XRD),scanning electron microscopy(SEM),Fourier transform infrared (FTIR),UV/vis and photoluminescence(PL) spectroscopy studies were employed to analyze the structural and optical properties of the sol-gel derived nanostructured CeO_2 film.The average crystallite size was estimated from the XRD pattern using by Scherrer equation as about 3-4 nm.An SEM micrograph shows that the film was porous in nature and crack free.The UV-visible absorption spectroscopic measurement results showed that the products had conspicuous quantum size effects.The absorption spectrum indicates that the sol-gel derived nanostructured CeO_2 film has a direct bandgap of 3.23 eV and the photoluminescence spectra of the film show a strong band at 378 nm:it may have a promising application as an optoelectronic material. Sol-gel derived nanostructured CeO_2 film was deposited on glass substrate using by dip-coating technique with annealing at 650℃.X-ray diffraction(XRD),scanning electron microscopy(SEM),Fourier transform infrared (FTIR),UV/vis and photoluminescence(PL) spectroscopy studies were employed to analyze the structural and optical properties of the sol-gel derived nanostructured CeO_2 film.The average crystallite size was estimated from the XRD pattern using by Scherrer equation as about 3-4 nm.An SEM micrograph shows that the film was porous in nature and crack free.The UV-visible absorption spectroscopic measurement results showed that the products had conspicuous quantum size effects.The absorption spectrum indicates that the sol-gel derived nanostructured CeO_2 film has a direct bandgap of 3.23 eV and the photoluminescence spectra of the film show a strong band at 378 nm:it may have a promising application as an optoelectronic material.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第5期21-25,共5页 半导体学报(英文版)
关键词 sol-gel derived nanostructured CeO_2 film band gap photoluminescence UV/VIS sol-gel derived nanostructured CeO_2 film band gap photoluminescence UV/VIS
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