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PD-SOI NMOSFET负微分电导现象的模拟分析 被引量：2

Research on negative differential electrical conductance of PD-SOI NMOSFET
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摘要 对无体接触的深亚微米部分耗尽型SOI NMOSFET器件的输出特性分别进行了等温、非等温和非等温能量输运3种模式的模拟,结果表明:SiO2埋层的低导热率使器件在静态工作条件下硅膜温度上升,电子迁移率降低,漏端电流减小;同时,电子温度上升使电子扩散率增加,在无体接触情况下体区电子密度升高,体电势降低,漏端电流减小.通过对模拟结果的分析认为电子迁移率降低和扩散率升高是造成PD-SOI NMOSFET负微分电导现象的主要原因. Output characteristics of deep submicron partially depleted SOI NMOSFET without body contact is studied by simulation in isothermal mode,nonisothermal mode and nonisothermal energy transport mode,respectively.The results show that： when the device operates on DC condition,temperature rising of silicon film due to low thermal conductivity of the buried oxide decreases electron mobility and drain current.The study shows that electron mobility reducing and electron diffusivity increasing are the major causes for negative differential conductance of PD-SOI NMOSFET.
作者 唐威 卢红利 刘佑宝 吴龙胜
机构地区 西安微电子技术研究所
出处 《武汉大学学报（工学版）》 CAS CSCD 北大核心 2010年第2期239-243,共5页 Engineering Journal of Wuhan University
基金 "十一五"预研基金项目(编号:51308010610)
关键词 负微分电导 PD-SOI 自加热效应 迁移率 扩散率 negative differential electrical conductance PD-SOI self-heating effect mobility diffusivity
分类号 TN303 [电子电信—物理电子学] TN386.1 [电子电信—物理电子学]
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参考文献9

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同被引文献13

  • 1江利,王建华,黄庆安,秦明.PIN二极管的研究进展[J].电子器件,2004,27(2):372-376. 被引量：11
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  • 10曹磊,刘红侠.新型SOANN埋层SOI器件的自加热效应研究[J].物理学报,2012,61(17):470-475. 被引量：3

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武汉大学学报（工学版）
2010年 第2期

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