摘要
首次采用ZnSe和MgF2双层减反射膜镀制半导体光放大器，分别测出了两端面的剩余反射比曲线。结果表明，该放大器两端面反射比乘积最小值低于1×10－6，按照O’Mahoney给出的判据，其可用行波单程增益为22dB。
Semiconductor optical amplifiers were successfully fabricated for the first time by using double layer antireflection coatings of ZnSe and MgF2. The variation in residual facet reflectivity with wavelength at both end facets was studied.The product of the minimum residual facet reflectivity at both end facets was found to be lower than 1×10-6.According to the criteria given by O' Mahoney, when used as a TWA, its usable single pass gain can be 22 dB.
出处
《真空科学与技术》
EI
CAS
CSCD
北大核心
1998年第1期33-37,共5页
Vacuum Science and Technology
关键词
双层减反射膜
半导体
光放大器
反射比
Double-layer antireflection coating, Semiconductor optical amplifier, Reflectivity
