摘要
介绍氧化钨基永久性的电可重编程的可变电阻器作为用于电子神经网络的模拟突触记忆联接器。该器件具有类晶体管的多层薄膜器件结构，它是依次由直流溅射和电子束蒸发工艺沉积到一个绝缘衬底，即衬底／Ni／WO3／SiO／Cr2O3／SiO／Al。用电压控制H+离子可逆地内插和去插到WO3薄膜来调制电阻。一个吸湿的Cr2O3薄膜用作H+离子源。该器件电阻可以特制和稳定在很宽的动态范围（约105～109Ω），并且编程速度受控制电压调制。讨论了该器件在响应速度、可逆性、稳定性和循环性方面的适应能力。
The tungsten-oxide based thin film memistor has been successfully fabricated, which is nonvolatile, electrically re-programmable and has variable resistance when used as an analog synaptic memory connections in electrically neutral networks. This transistor-like device, with a multi-layered structure, was fabricated by alternative deposition of Ni,WO3, Sio, Cr2O3, SiO and Al with DG supttering and electron beam techniques,respectively,respectiely. The resistance was modulated through the voltage controllable, reversible intercalation and deintercalation of the hydrogen ions in electrochrome tungsten-oxide films. A hygroscopic Cr2O3 thin film was used as a H+ ion source. The device resistance can be tailored and stabilized over a wide dynamic rage (abaut 105 to 109Ω),and its programming speed can be modulated by varying controlling voltage. The device properties, such as response speed, reversibility, stability, and cyclability, were also discussed.
出处
《真空科学与技术》
CSCD
北大核心
1998年第4期294-297,共4页
Vacuum Science and Technology
基金
国家自然科学基金
关键词
可重编程
可变电阻存储器
薄膜
读电极
写电极
Analog reprogrammable variable resistors with memory, Read electrode, Write electrode
