摘要
用提拉法技术生长出了掺Bi的α-BaB2O4单晶并经过γ射线辐照.测定了样品在室温下的吸收光谱、发射光谱及荧光衰减曲线.在808nm波长光的激发下,经γ射线辐照后的α-BaB2O4单晶中发现了中心波长为1139nm、半高宽为113nm的近红外宽带发光现象.讨论了辐照条件和退火处理对Bi离子发光的影响.对于其发光机理进行了初步的探讨.
The bismuth-doped α-BBO single crystals were prepared by traditional Czochralski method in ambient atmosphere,and the obtained samples were irradiated by γ-ray. The absorption,emission and fluorescence decay curves were measured at room temperature. Near-infrared super-broadband emission （FWHM ～ 113 nm） of Bi：α-BBO single crystal subjected to γ-irradiation was observed to be center-peaked at ～ 1139 nm upon 808 nm excitation. The effect of irradiation and annealing treatment on the emission was discussed,and the mechanism for the wide emission band was investigated preliminarily.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第5期3538-3541,共4页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60778036
60938001和50972061)
中国科学院百人计划
上海市科学技术委员会(批准号:08ZR1421700和08520704400)
宁波市科技局项目(批准号:2009A610007)
宁波大学王宽诚幸福基金资助的课题~~
关键词
近红外宽带发光
α-BaB2O4单晶
辐照
退火处理
near infrared super-broadband emission
α-BaB2O4 single crystal
irradiation
annealing treatment
