摘要
从菲涅耳衍射积分的一般形式出发,结合二维(2D)移相光栅掩模(PSGM)的具体参数,通过数值计算得到了作用于样品表面的光强分布.实验上,采用激光干涉晶化的方法,利用周期为400nm的2D-PSGM调制KrF准分子激光器的脉冲激光束斑的能量分布,在氢化非晶硅(a-Si:H)薄膜上直接制备了2D的有序纳米硅(nc-Si)阵列.测试结果表明:2D的nc-Si阵列的周期和PSGM的相一致,晶化区域与理论模拟的结果符合得很好.
Based on the general form of Fresnel diffraction,light intensity distribution in laser interference crystallization with a phase shifting grating mask （PSGM） was calculated. Two-dimensional （2D） periodic nanocrystalline silicon （nc-Si） array was fabricated by laser interference crystallization combined with 2D-PSGM. The light intensity irradiated on the surface of a-Si：H samples can be modulated by the PSGM with the periodicity of 400 nm. Experimental results demonstrate that the periodicity of 2D nc-Si array is the same as that of the PSGM,the crystalline regions of nc-Si array are consistant with the simulated results.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第5期3205-3209,共5页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2006CB932202)
江苏省自然科学基金(BK2007135)
国家高技术研究发展计计划(批准号:2008AA031403)资助的课题~~
关键词
纳米硅
激光干涉晶化
移相光栅
菲涅耳衍射
nanocrystalline silicon
laser interference crystallization
phase shifting grating
fresnel diffraction
