摘要
研究了结构为ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al的有机白光电致发光器件(WOLED)。分别在ITO与NPB间加入高迁移率的m-MTDATA:4F-TCNQ来增强器件的空穴注入,在阴极和发光层间加入高迁移率的Bphen:Liq层增强器件的电子注入,降低驱动电压,提高器件效率。同时,由于注入的电子和空穴数量偏离平衡,器件的效率也会受到影响。实验中,通过调节4F-TCNQ的掺杂浓度来调控空穴的注入和传输,使载流子达到高度平衡。器件的最大电流效率和流明效率分别达到了9.3cd/A和4.6 lm/W。
White organic light emitting devices（OLEDs） with the structure of ITO/m-MTDATA：x%4F-TCNQ/NPB/TBADN：EBDP：DCJTB/Bphen：Liq/LiF/Al are demonstrated.A p-doping transport layer that includes 4F-TCNQ doped into m-MTDATA is used as hole transporting layer（HTL） and an n-doping transport layer comprised of Liq doped into Bphen is used as electron transporting layer（ETL） to lower cathode barrier and facilitate carrier injection.An effective carrier balance（the number of holes is equal to the number of electrons） between holes and electrons is considered to be one of the most important factors to improve OLEDs.The holes injection and transport of the devices are controlled by adjusting doping concentration of 4F-TCNQ for good balance of carriers.The maximum current efficiency and power efficiency of devices are 9.3 cd/A and 4.6 lm/W,respectively.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2010年第3期328-330,共3页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(902020346、0477014、60577041)
中国矿业大学校青年科研基金资助项目(2007A051)
关键词
载流子
平衡
低压
white organic light emitting devices（WOLED）
carriers
balance
low-voltage
