摘要
利用开管扩Ｇａ系统，分段控制掺杂量，使杂质Ｇａ在硅中形成阶梯形分布，用于快速晶闸管的研制，理论分析与测试结果表明，器件阻断耐压值比原高斯函数分布提高２００Ｖ左右，且通态特性和动态特性保持优良。实验证明，Ｇａ的阶梯分布是制造快速晶闸管的一条新途径。
The gallium dopant with a step distribution in silicon has been formed using the technology of open tube Ga diffusion and controlling the quantity of the impurity in different depth. This processing has been utilized in fabrication of high speed thyristors to improve the blocking voltage. In this study we demonstrate that the step distribution of Ge dopant formed using open tube Ga diffusion is a new optimized process to fabricate high voltage and high speed thyristors.
关键词
阶梯分布
耐压特性
晶闸管
掺杂
Steps distribution Voltage properties Thyristor
