摘要
本文引用了附加有浮动电位保护环和场板的ＶＤＭＯＳ结构击穿电压的解析表达式，描述了浮动电位保护环和场板效应对穿通击穿电压的改进，经比较理论结果与测量数据有较好的一致性。
This paper quoted the analytical expression of float electric potential protective loop and field board VDMOS structure breakdown voltage, Described the condition of pass throughing breakdown voltage was affected by float electric potential protective loop and field board effects, Theoretical results are in well agreement with measured data.
