摘要
本文给出一种测量掺Ｃｒ４＋饱和吸收体基态和激发态吸收截面的方法，并用之测得国产Ｃｒ４＋：ＹＡＧ的两个吸收截面分别为４．３×１０－１８ｃｍ２和８．２×１０－１９ｃｍ２；同时给出一种用泵浦探测法测量可饱和吸收体μｓ量级基态恢复时间的方法，并用之测得国产Ｃｒ４＋：ＹＡＧ的基态恢复时间为３．
This paper presents a new method for the measurement of the ground state and the excited state absorption cross sections of a Cr 4+ doped saturable absorber.The two absorption cross sections are determined by use of the small signal transmission,the saturated transmission and the linear relation between transmission and laser intensity when the laser intensity is relatively small.The two absorption cross sections of the Cr 4+ :YAG crystal made in China are determined to be 4.3×10 -18 cm 2 and 8.2×10 -19 cm 2,respectively.Meanwhile,a method for the measurement of the μs ground state recovery time of a saturable absorber by means of pump probe technique is presented and the ground state recovery time of the Cr 4+ :YAG crystal made in China is determined to be 3.2μs.
出处
《光电子．激光》
EI
CAS
CSCD
1998年第6期453-457,共5页
Journal of Optoelectronics·Laser
基金
山东省自然科学基金
山东大学跨世纪基金
关键词
饱和吸收体
吸收截面
恢复时间
泵浦
激光材料
saturable absorber
ground state
excited state
absorption cross section
pump probe technique
recovery time
Cr 4+ :YAG crystal
