摘要
本文对低温下激光与ＰＣ型ＨｇＣｄＴｅ在激光照射后将产生的记忆效应进行了研究。根据本文提出的激光诱导激子的物理模型，得到了ＰＣ型ＨｇＣｄＴｅ在激光作用时电导率下降是激子对载流子散射的结论。
When PC type HgCdTe detector is exposed at low temperature (77K) to laser illumination (He Ne laser or Nd:YAG laser),a decrease in the conductivity is observed when the laser ceases.This effect is usually called “remaining effect” and the metastable low conductivity state can be simply by beating the PC type detector to above room temperature.In this paper,we suggest a solution of the problem.It is proposed that irradiation with laser produces excitons and that the scattering of charge carriers due to these excitons give rise to a decrease in the conductivity of PC type HgCdTe detector.The calculating results are agreement with the experiments results.
出处
《光电子．激光》
EI
CAS
CSCD
1998年第6期450-452,468,共4页
Journal of Optoelectronics·Laser
基金
国家教委跨世纪优秀人才计划基金
霍英东教育基金
高校青年教师基金
江苏省自然科学基金
