摘要
采用共沉淀法合成了ATO半导体颜料的前驱体,前驱体经过烧结获得半导体颜料,通过XRD、EDS等手段对颜料进行表征,测试了不同烧结温度下颜料粉体电阻率,研究了烧结温度对ATO半导体颜料涂层光学性能的影响。研究结果表明,烧结温度对颜料的粉体电阻率和涂层光学性能影响明显,当烧结温度为1300℃时,制备的颜料粉体电阻率为15Ω.cm,涂层红外发射率仅为0.71。
ATO semiconductor pigment precursors were synthesized by co-precipition method, Semiconductor pigments were obtained by sinter experiments. The structure and component of the pigments prepared were characterized by X-ray diffraction and energy dispersive spectra, and the powder resistivity were characterized. The effect of sinter temperature on coating optical property of the pigments were discussed. The results showed that sinter temperature played an important role in powder resistivity and coating optical property, the powder resistivity is 15Ω·cm and the coating infrared emissivity is only 0.71 when the sinter temperature is at 1300℃.
出处
《化学工程师》
CAS
2010年第3期51-54,共4页
Chemical Engineer
关键词
共沉淀法
ATO
烧结温度
粉体电阻率
光学性能
co-precipition method
ATO
sinter temperature
powder resistivity
optical property
