摘要
利用分子束外延技术生长出了ＧａＡｌＡｓ／ＧａＡｓ折射率渐变分别限制单量子阱结构材料。用该材料作出的激光二极管作泵浦源对Ｎｄ：ＹＡＧ激光器进行端面泵浦实验，在工作电流为３．３Ａ时，ＬＤ输出功率为２．７Ｗ，得到Ｎｄ：ＹＡＧ激光器的输出功率达７００ｍＷ，光－光转换效率达２６％。
GaAlAs/GaAs material with gradient refraction index separate confinement (GRIN-SCH) single quantum well structure has been grown by MBE.A laser diode(LD) made from this material is used as the pumping source of Nd:YAG laser to carry out end pumping experiment.Output power of Nd:YAG laser up to 700 mW and optical-to-optical transform efficiency of 26% are obtained at LD current of 3.3 A with the output power of 2.7 W.
出处
《半导体光电》
CAS
CSCD
北大核心
1998年第6期407-408,共2页
Semiconductor Optoelectronics
