摘要
在总结光电耦合器噪声产生机制的基础上,建立光电耦合器电离辐射损伤1/f噪声相关性模型,并通过辐照实验验证了模型的正确性。该模型全面分析了光电耦合器的电离辐射损伤,为噪声参量用于光电耦合器电离辐射损伤表征提供了理论依据。
Defects generated by ionizing radiation damage in optoelectronic coupled devices （OCDs） is the origin of noise. Based on a summary of the noise mechanism in OCDs, a model of ionizing radiation damage correlating with 1/f noise in OCDs has been established. The experimental results agree well with the proposed model. The model analyzes the mechanism and provides the noise representation theory for ionizing radiation damage in OCDs.
出处
《电子科技》
2010年第3期50-52,共3页
Electronic Science and Technology
