摘要
本文以掺金硅为样品,研究了在光注入时磁场对样品中深能级的影响,以及磁场方向改变对深能级的影响等问题,并在理论上对这些问题加以探讨.
The influences of the magnetic field on the deep levels in Au-doped Si samples have been studied when light was injected and the direction of magnetic field changed. These phenomena were studied theoretically.
出处
《南京邮电学院学报》
北大核心
1990年第4期88-90,共3页
Journal of Nanjing University of Posts and Telecommunications(Natural Science)
关键词
半导体
磁光效应
深能级
Localized level
Magneto-optical effects
Semiconductor materials
