摘要
Mgx Zn1–x O thin films with x = 0, 0.11, 0.28, 0.44, 0.51, and 0.65 were grown by plasma-assisted molecular beam epitaxy on (0001) sapphire substrates. X-ray diffraction measurement reveals that phase separation of the Mgx Zn1–x O films occurred at x =0.44 and 0.51. Optical absorption spectra show that the absorption edges of the films shift to high-energy side with increasing Mg contents. In resonant Raman spectra, multiple-order Raman peaks originating from ZnO-like longitudinal optical phonons were observed. Moreover, the blue shift and the full width at half maximum of Raman scattering peaks increase continuously with x increasing from 0 to 0.28, which indicates that Zn is substituted by Mg in hexagonal lattice.
MgxZn1-xO thin films with x=0, 0.11, 0.28, 0.44, 0.51, and 0.65 were grown by plasma-assisted molecular beam epitaxy on （0001） sapphire substrates. X-ray diffraction measurement reveals that phase separation of the MgxZn1-xO films occurred at x =0.44 and 0.51. Optical absorption spectra show that the absorption edges of the films shift to high-energy side with increasing Mg contents. In resonant Raman spectra, multiple-order Raman peaks originating from ZnO-like longitudinal optical phonons were observed. Moreover, the blue shift and the full width at half maximum of Raman scattering peaks increase continuously with x increasing from 0 to 0.28, which indicates that Zn is substituted by Mg in hexagonal lattice.
基金
supported by the National Natural Science Foundation of China (Grant No 50532050)
