摘要
采用常压金属有机物气相沉积法生长ＡｌＡｓ／ＧａＡｓ周期性反射膜，并利用双晶Ｘ射线衍射、扫描电子显微镜和记录式分光光度计等分析手段，对材料结构及光学性质进行了分析。实验结果表明，在７８０℃连续生长的薄膜结构和晶体质量都很好，但是反射率低；通过模拟计算，连续生长存在渐变层，而渐变层大大降低了反射率；在同样生长条件下间断生长得到较高反射率的薄膜材料。
AlAs/GaAs bragg periodic reflector is grown by metalorganic vapor phase epitaxy (MOVPE).The structure of these reflectors is characterized by double crystals X ray diffraction and cross sectional scanning electron microscopy (XSEM).Optical property of reflectors is characterized by recorder spectrophotometer.It is shown that the structure and crystalline quality of reflectors grown continually at 780℃ are good,but the reflectivity is lower.There is an intermediate layer at continual growth by simulation calculation.The intermediate layer lowers reflectivity.The reflectors interruptly grown at same condition is highly reflective.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1998年第1期60-64,共5页
Journal of Synthetic Crystals
基金
山东大学跨世纪人才资助
关键词
反射膜
砷化镓
砷化铝
晶体生长
MOVPE
AlAs/GaAs Bragg reflectors,reflectivity,addmittance matrix method,metalorganic vapor phase epitaxy
