摘要
利用脉冲碳等离子体源可以直接在Si和Ge片镀制类金刚石薄膜.被镀制的类金刚石薄膜一般采用激光拉曼光谱仪进行定性分析.实验结果表明:SP^3成分含量与SP^2成分含量之比,与放电回路的电压有关,在一定电压范围内,随电压的增加,SP^3与SP^2之比增大,从而选择出镀制类金刚石薄膜的最佳工艺参数.
Diamond-like carbon films were directly deposited onto germanium and silicon by pulse discharge carbon plasma source. The deposited films were characterized by Raman spectroscope. The results show that the ratio of sp3 to sp2 bonds of the deposited films increases with increasing discharge voltage. The optimum conditions for depositing diamond-like carbon coating was achieved by optimizing the deposition process.
出处
《表面技术》
EI
CAS
CSCD
1998年第5期17-18,共2页
Surface Technology
