摘要
基于SMIC 0．18μm RF-CMOS工艺，实现了一种工作于2．45GHz的功率放大器，给出了电路仿真结果和电路版图。电路采用两级放大的结构，分别采用自偏置技术和电阻并联负反馈网络来缓解CMOS器件低去穿电压的限制，同时保证了稳定性的要求。为了提高线性度，采用一种集成的二极管线性化电路对有源器件的输入电容变化提供一种补偿机制，漏端的LC谐振网络和优化的栅偏置用来消除由跨导产生的非线性谐波。在3V电源电压下，放大器功率增益为23dB，输出1dB压缩点约为25dBm，对应的功率附加效率PAE可达35％。
A 2. 45 GHz CMOS power amplifier （PA） was designed based on SMIC＇s 0. 18μm RF-CMOS technology. Simulation results and circuit layout were presented. A two-stage amplifier structure was employed, in which self-biasing and negative feedback of parallel resistors were adopted, respectively, to release restrictions of oxide breakdown and ensure stable operation. To improve linearity, an integrated diode linear circuit was used to provide compensation for input capacitance variation of active devices. And an LC resonance network at drain and an optimized gate bias were applied to avoid non-linear harmonics resulted from gm. At 3 V supply voltage, the proposed PA had a power gain of 23 dB,a P1dB of 25 dBm and a power added efficiency （PAE） up to 35%.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第6期747-750,755,共5页
Microelectronics
基金
长三角科技合作项目（2008C16017）
