摘要
采用传统陶瓷制备工艺,以容差因子为依据进行CuO掺杂,制备了可在较低温度烧结成瓷的Ba0.6Sr0.4TiO3(BSTO)基陶瓷。结果表明,w(CuO)=0.5%～4.0%的BSTO基陶瓷可在1200℃烧结成瓷,且不会引入杂相。介电性能测试表明,在室温低频下,随CuO掺杂量的增加,BSTO陶瓷的介电常数增加,而介电损耗降低;在微波频段下,BSTO基陶瓷的介电常数和介电损耗均随CuO掺杂量的增加而增大。可调性测试表明,在1kV/mm的直流偏压下,各BSTO基陶瓷掺杂样的可调性均大于10%,其中,试样w(CuO)=1%的可调性达到13.2%。
According to the tolerance factor,CuO doped Ba0.6Sr0.4TiO3 （BSTO）based ceramics were prepared by the traditional ceramic processing. The results show that BSTO based ceramics with 0.5%~4.0% of CuO doping could be sintered at 1 200 ℃,and no other phase was introduced. The dielectric properites menasurements indicated that the dielectric constant of BSTO ceramic increased and the dielectric loss decreased with the increasing of CuO content at room temperature and at low frequency;but at microwave frequencies,the dielectric constant and the dielectric loss both increased with the content of CuO.The tunabilities of all the CuO doped BSTO samples are more than 10%（at 1 kV/mm）,especially,the tunability of 1% CuO doped BSTO sample has been up to 13.2%（at 1 kV/mm）.
出处
《压电与声光》
CSCD
北大核心
2009年第6期888-891,共4页
Piezoelectrics & Acoustooptics
基金
西安应用材料创新基金资助项目(XA-AM-200808)
西北工业大学科技创新基金资助项目(2006CR11)
西北工业大学研究生创业种子基金资助项目
关键词
钛酸锶钡
低温烧结
介电性能
可调性
barium strontium titanate low temperature sintering dielectric prperties tunbility
