摘要
采用化学共沉淀法合成26wt%ZrW2O8/ZrO2近零膨胀复合陶瓷靶材,并以脉冲激光法在石英基片上沉积制备了ZrW2O8/ZrO2复合薄膜。利用X射线衍射仪（XRD）、热膨胀仪、扫描电子显微镜（SEM）研究了复合靶材的晶体结构、热膨胀性能和致密度,同时也探索了热处理温度对复合薄膜的相组成和表面形貌的影响。结果表明：合成的靶材由-αZrW2O8和m-ZrO2组成,26wt%ZrW2O8/ZrO2复合靶材在30℃-600℃的热膨胀系数为-0.5649×10^-6K^-1,近似为零,且靶材致密、均匀;脉冲激光沉积制备的薄膜为非晶态,表面平滑、致密,随着热处理温度的升高,薄膜开始结晶,在1200℃热处理6min后得到纯ZrW2O8/ZrO2复合薄膜,且两相物质在膜层中分散均匀,结晶后的薄膜存在一些孔洞缺陷。
The composite target of 26wt% ZrW2O8/ZrO2, with nearly zero thermal expansion coefficient, were fabricated by chemical co-deposition, and then, the ZrW2O8/ZrO2 films were grown by pulsed laser deposition （PLD） with this lab-made target on quartz substrates. The microstructures and thermal properties of the composite target were characterized with X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The influence of film growth conditions, especially the annealing temperature, on phase structures and surface morphology was studied. The results show that the target consists of a-ZrW2O8 and m-ZrO2, and the highly compact and uniform target has a near zero thermal expansion coefficient of - 0.5649×10^-6K^-1 in the range of 30℃- 600℃ and that the high temperature annealing, at 1200℃for 6min, crystallizes the compact, uniform,amorphous ZrW2O8/ZrO2 films. However, high temperature annealing and possible chemical reactions roughen the surface, introducing defects of holes and vacancies.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2009年第6期686-689,共4页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(No.50372027)
江苏省高校自然科学重大基础研究项目(No.06KJA43010)
江苏大学博士创新基金(CX07B-15x)
