摘要
Quaternary alloys Mg2Sn0.4Si0.6-xGex （x=0, 0.02, 0.05, 0.08 0.1, and 0.2） were prepared using induction melting followed by hot-pressing. Relative densities of the sintered samples were over 97% of the theoretical values. Multiple phases were detected in the samples. It was found that the Seebeck coefficient was sensitive to the content of Mg2Ge and a maximum value of about 350 μV-K^-1 was obtained. The introduction of Ge increases the electrical conductivity and the thermal conductivity simultaneously. The mechanism of this phenomenon was discussed. A maximum dimensionless figure of merit, ZT, of about 0.28 was obtained for Mg2Sn0.4Si0.55Ge0.05 at 550 K.
Quaternary alloys Mg2Sn0.4Si0.6-xGex （x=0, 0.02, 0.05, 0.08 0.1, and 0.2） were prepared using induction melting followed by hot-pressing. Relative densities of the sintered samples were over 97% of the theoretical values. Multiple phases were detected in the samples. It was found that the Seebeck coefficient was sensitive to the content of Mg2Ge and a maximum value of about 350 μV-K^-1 was obtained. The introduction of Ge increases the electrical conductivity and the thermal conductivity simultaneously. The mechanism of this phenomenon was discussed. A maximum dimensionless figure of merit, ZT, of about 0.28 was obtained for Mg2Sn0.4Si0.55Ge0.05 at 550 K.
基金
supported by the National Natural Science Foundation of China (No.50522203, 50731006)
the National Basic Research Program of China (No.2007CB607502)
