摘要
以金属有机物化学气相沉积(MOCVD)设备生长的4片蓝宝石衬底氮化镓基发光二极管(LED)外延片为样品,对氮化镓基LED的发光性能的影响因素进行了对比分析.采用场发射扫描电子显微镜(FSEM)观测湿法腐蚀前后的样品表面缺陷形貌,用X射线衍射(XRD)检测样品的晶体质量,通过室温光致荧光光谱(RT-PL)及光学积分球对样品的发光特性进行了测量和分析.结果表明:结构设计对提高LED发光性能的影响大于晶体质量的影响,优化LED光学、电学结构是提高氮化镓基LED发光性能的关键手段.
The factors influencing luminescence performance of sapphire substrate GaN-based light-emitting diode （I.ED） was comprehensively. The surface morphology defects before and after wet etchings were observed by field emission scanning electron microscope （FSEM）. The crystal qualities were determined through X-ray diffraction （XRD）. The luminescence properties were analyzed by a room temperature photoluminescence spectroscopy （RT-PL） and optical integrating sphere. The results show that the structural design is more important than the crystal quality in improving the luminescence performance of light-emitting diode. The optical and electrical structure optimization is a key way to improve the luminescence properties of GaN-based LED.
出处
《华中科技大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2009年第11期54-56,共3页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
基金
国家自然科学基金重点资助项目(50835005)
关键词
氮化镓
发光二极管
X射线衍射
光致荧光光谱
薄膜
gallium nitride
light-emitting diodes
X-ray diffraction
photoluminescence spectroscopy
thin films
