摘要
通过电阻和磁阻的测量，研究了多晶样品ＳｍｘＣ６０的电子输运性质．实验发现：ＳｍｘＣ６０的输运机制随ｘ的不同而发生变化．ＳｍＣ６０的电阻率温度关系可用涨落导致的隧道穿透模型解释，而Ｓｍ２７５Ｃ６０的输运性质则可由弱局域化和电子电子相互作用解释．Ｓｍ２７５Ｃ６０的磁阻数据能用弱局域化和电子电子相互作用模型很好地拟合，而ＳｍＣ６０的磁阻数据则不能．
Abstract The electrical transport of polycrystalline samples Sm x C 60 has been investigated by resistivity and magnetoresistance (MR) measurements.The transport mechanism is different for the samples with different x in Sm x C 60 system.The temperature dependent resistivity can be explained by the fluctuation induced tunneling model for the sample SmC 60 .The transport properties for the sample Sm 2 75 C 60 appear to be dominated by weak localization and electron electron interactions.The MR data of the sample Sm 2 75 C 60 can be fitted by a weak localized model with strong electron electron interactions,but that of the sample SmC 60 cannot.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第11期1847-1852,共6页
Acta Physica Sinica
