摘要
对吸附法制备的TiH_x进行升温加热处理,发现温度大于343℃时样品中的H才有明显的释放现象.对在343℃下保温不同时间间隔的样品.用3MeV^4He弹性前冲测量法得出了样品表面H的深度分布和含量,发现表面的C沾污对H具有强烈的捕陷作用.
The TiHx film prepared by chemical adsorption is annealed. When temperature is above 343℃, the concentration of hydrogen varies significantly. The depth profiles of hydrogen in TiHx samples annealed at 343℃ for different time are determined by ERD with 3MeV 4He. The mechanism of thermal release behavior of hydrogen is discussed. When the annealing time is long enough, a hydrogen peak at the sample surface can be observed. It is confirmed by high energy He+ backscattering that the carbon contaminated at the surface during the experiments or/and the film preparation can strongly influence the release behavior of hydrogen.
出处
《核技术》
CAS
CSCD
北大核心
1998年第10期586-589,共4页
Nuclear Techniques
