摘要
文中介绍了一组专用LDMOS晶体管。该产品用于非对称Doherty拓扑,在这个拓扑中,载流子(主)晶体管包括一个集成的AB类偏置,而峰化(从)晶体管则包括一个集成的C类偏置。两种晶体管采用相同封装,但输出功率有1dB的差异,以提高Doherty的整体效率,并构建56dBm(400W)峰值功率放大器。文中还介绍了支持CW和3G信号的整体Doherty放大器的设计和测量,并显示了该解决方案相对于使用经典"AB类优化"晶体管的常规对称Doherty放大器的优势。
This paper presents a dedicated pair of LDMOS transistors intended to be used in an asymmetrical Doherty topology,where the Carrier(Main) transistor includes an integrated class AB bias,and the Peaking(Auxiliary) transistor includes an integrated class C bias.Both transistors are provided in the same package,have 1dB difference in output power to improve overall Doherty efficiency,and allow building a 56dBm(400W) peak power amplifier.Design and measurements of the complete Doherty with both CW and 3G signals are presented showing the advantages of such a solution over a regular symmetric Doherty using classical'class AB optimized'transistors.
出处
《电子设计应用》
2009年第11期46-49,共4页
Electronic Design & Application World
