摘要
采用射频磁控溅射法,以高纯Al(99.999%)为靶材,高纯N2为反应气体,在硅及金刚石上制备了氮化铝(AlN)薄膜.研究了氩气氮气比例、溅射气压等工艺参数对AlN膜沉积的影响规律.结果表明,随着氮气比例的增大AlN(002)取向明显增强.溅射气压低有利于以AIN(002)面择优取向.
A1N thin films were successfully deposited on Si and diamond substrates by magnetron sputtering in N2 with a high pure Al（ 99. 999% ）disc as the target. In order to control the film quality, influences of parameters, such as proportion of Ar and N2 , working pressure, on the A1N thin films deposited were studied systematically. The results show that： The A1N （002） orientation increase with the increase of proportion of N2. The low sputtering pressure are favorable to A1N（002 ）formation.
出处
《天津理工大学学报》
2009年第5期12-14,共3页
Journal of Tianjin University of Technology
基金
天津市自然科学基金重点项目(06YFJZJC00100)
关键词
磁控溅射
择优取向
氮化铝薄膜
金刚石
magnetron sputtering
preferential orientation
A1N thin films
diamond
