摘要
用高阻ｐ型硅（ρ＝１２０００Ωｃｍ）单晶材料制作了ＭＯＳ结构器件，对样管的光电参数进行了测量。在激光辐射下，测出样管在光照前后的Ｃ－Ｖ实验曲线及样管在０．４Ｖ偏压下，光照前后的电容相对变化率为３９．５％。而用低阻ｐ型硅制成的样管，在同样条件下，电容的变化量不大。
The MOS structure device is fabricated with high resistivity p type silicon ( ρ =12000Ω·cm),and their photoelectric parameters are measured.The experimental C V curves with and without laser radiation were measured.The relative variation ratio of capacitance with laser radiation at 0 4 voltages is 39 5%.But the relative variation ratio for low resistivity p type silicon is about zero in same condition.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第5期40-42,共3页
Semiconductor Technology
关键词
半导体光电器件
C-V特性曲线
光电容
测试
Semiconductor optoelectronic devices C V Characteristic curve Photocapacitance
