摘要
Ｐｔ常被用来在金属氧化物半导体上做肖特基接触。在常温下，Ｐｔ／ＴｉＯ２界面处的电子电导对Ｐｔ／ＴｉＯ２肖特基势垒高度的变化非常敏感。本文描述了利用该性质制造的湿敏传感器的性能，并讨论了因水在Ｐｔ／ＴｉＯ２界面处的化学吸附，引起表面Ｆｅｒｍｉ能级改变，影响Ｐｔ／ＴｉＯ２肖特基势垒的高度，从而导致了Ｉ－Ｖ曲线变化的物理过程，对器件制造过程中的工艺问题也有所论述。
Platinum is often used as a Schottky contact material on metal oxide semiconductor.At room temperature,the electronic conductivity across the Pt/TiO 2 interface leads to be extremely sensitive to the height of Schottky barrier.The performance of humidity sensors fabricated by using this sensitivity is described in this paper.The mechanism is that the change of the height of Schottky barrier of Pt and TiO 2 induced by the chemisorption of water,causing the surface state Fermi level to change leads to the drift of I V characteristic curve.The properties of such a Pt/TiO 2 humidity sensor are described while the fabrication related problems are also discussed.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第5期29-32,42,共5页
Semiconductor Technology
