摘要
报道了ｎ型ＧａＡｓ上欧姆接触的制备及其可靠性，以及基于欧姆接触退化的ＧａＡｓＭＥＳ－ＦＥＴ的失效分析。结果表明，ｎ型ＧａＡｓ上欧姆接触的制备已日趋成熟，接触电阻有所减小，表面形貌及热稳定性方面都得到了很大程度的提高，接触材料也日趋丰富，ＧａＡｓＭＥＳＦＥＴ的失效分析方法也有明显改进。
The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper.The results show that the fabrication of ohmic contact on n type GaAs has deve loped a lot,contact resistance has decreased,surface morphology and thermal reliability have been improved very much,and contact materials have become richer.The method of GaAs MESFET failure analysis has been improved greatly.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第5期6-12,28,共8页
Semiconductor Technology
