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氧沉淀对直拉硅单晶硬度的影响 被引量：2

Influences of Oxygen Precipitation on Vickers Hardness of Czochralski Silicon
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摘要 研究了氧沉淀对直拉(CZ)硅单晶维氏硬度的影响。研究表明,在发生一定程度氧沉淀的情况下,硅单晶的硬度会由于氧沉淀导致的间隙氧浓度的降低而减小,此时间隙氧原子的固溶强化作用对硅单晶硬度具有显著的影响;而当氧沉淀足够显著时,由于氧沉淀的密度和尺寸较大,氧沉淀在硅单晶中的第二相强化作用得以显现,此时硅单晶的硬度不随间隙氧浓度的降低而减小,反而有较为显著的提高。 The effect of oxygen precipitation on Vickers hardness of Czochralski （CZ） silicon was investigated. When appropriate extent of oxygen precipitation appeared, the Vickers hardness of CZ silicon decreased with the reduction of interstitial oxygen concentration （ c [ Oi ] ）. But sufficiently significant oxygen precipitation would lead to the oxygen precipitates with high density and large size, the precipitation strengthening effect appeared, as a result, the Vickers hardness of CZ silicon did not decrease with further reduction of c[Oi] but increased to a certain extent.
作者 曾徵丹 马向阳 陈加和 杨德仁
机构地区 浙江大学硅材料国家重点实验室
出处 《稀有金属》 EI CAS CSCD 北大核心 2009年第5期758-761,共4页 Chinese Journal of Rare Metals
基金 国家自然科学基金重点项目(50832006)资助
关键词 单晶硅 氧沉淀 维氏硬度 mono-crystalline silicon oxygen precipitates Vickers hardness
分类号 TN304.1 [电子电信—物理电子学] O614.41 [理学—无机化学]
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参考文献11

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同被引文献17

  • 1崔继锋,叶志镇,吴贵斌,赵炳辉.高Ge成份SiGe合金弛豫及热应变的Raman光谱研究[J].材料科学与工程学报,2005,23(1):81-83. 被引量：4
  • 2冯团辉,张宇翔,王海燕,靳瑞敏,卢景霄.a-Si:H薄膜的再结晶技术及Si膜的Raman光谱分析[J].材料科学与工程学报,2005,23(3):462-465. 被引量：5
  • 3张国栋,翟慎秋,崔红卫,刘俊成.半导体单晶生长过程中的位错研究[J].人工晶体学报,2007,36(2):301-307. 被引量：12
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  • 5Sanchez E K, Liu J Q, Graef M D, et al. Nucleation of threading dislocations in sublimation grown silicon carbide[J]. J Appl Phys,2002,91(3)：1143.
  • 6Chen Q, Liu X Y, Biner S B. Solute and dislocation junction interactions [J]. Acta Mater, 2008,56： 2937.
  • 7Dash W C. Improvements on the pedestal method of growing silicon and germanium crystal [J] J Appl Phys, 1960,31： 736.
  • 8Taishi T, Huang X M, et al. Behavior of the edge disloca- tion propagating along the growth direction in Czochralski Si crystal growth [J].J Cryst Growth,2005,275 : 2147.
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  • 10李巨晓,庄力.机械振动对直拉法Si单晶生长的影响[J].半导体技术,2008,33(4):304-307. 被引量：4

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稀有金属
2009年 第5期

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