摘要
采用非接触式激光／微波光电导衰减技术（ＬＭＰＣＤ）对Φ５０．８ｍｍ双面抛光的半绝缘ＧａＡｓ晶片的复合寿命进行了无损伤检测，得到了有效载流子寿命沿晶片直径的径向分布曲线。结果表明，复合寿命为几百纳秒，在径向呈“Ｍ”型分布，和半绝缘ＧａＡｓ晶片中ＥＰＤ的“Ｗ”型分布相反。在考虑了位错密度和掺杂浓度对寿命的影响的基础上，对ＧａＡｓ晶片的寿命进行了讨论。
The non destructive contactless measurement of lifetime in Φ 50.8 mm SI GaAs wafers was carried out by laser/microwave photoconductance decay technology (LM PCD) and the effective carrier lifetime distribution across the wafer was obtained. The results show that the lifetime is several hundred ns and its distribution is “W” shape, contrary to the EPD distribution of “M” shape. The lifetime in GaAs wafers was also discussed by taking dislocation density and dopant concentration into account.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1998年第6期450-451,共2页
Chinese Journal of Rare Metals
关键词
复合寿命
半绝缘
砷化镓
LM-PCD
Recombination lifetime, SI GaAs, Laser/Microwave, Photoconductance, Decay
