期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

磁性隧道结中自旋相关输运的势垒影响 被引量：2

Influence of potential barrier in spin-dependent transport in magnetic tunnel junctions
在线阅读 下载PDF
导出
摘要 为了研究势垒对铁磁/绝缘层/半导体/绝缘层/铁磁(FM/I/SM/I/FM)双隧道结中自旋相关电子输运特性的影响,提出了在半导体层厚度合适的情况下,非对称势垒对于提高平行结构磁性双隧道结的自旋注入效率SIE(spin injection efficiency)更具优势。数值计算结果表明,当两势垒强度的比率达到合适数值时双结的SIE和隧穿磁电阻TMR(tunneling magnetore resistance)都将达到最大,这给提高从铁磁到半导体的SIE带来新选择。研究还表明,非对称势垒结构磁性隧道结中增大铁磁交换能对提高SIE和TMR都是有益的,而且铁磁交换能的增加对SIE的提高要比对TMR的提高更显著。 To investigate the influence of the potential barrier in spin-dependent transport in FM/I/SM/I/ FM （ferromagnet/insulating barrier/semiconductor/insulating barrier/ferromagnet） magnetic double tunnel junctions, it was proposed that asymmetric potential barrier played a superior role in enhancing SIE （spin injection efficiency） in parallel structure of the magnetic double tunnel junctions when the layer of semiconductor was suitable. According to the numerical calculation, SIE or TMR（tunneling magnetore resistance） could reach a maximum when the ratio of the two potential barriers was suitable, and it provided a new way to enhance the spin injection efficiency from ferromagnet to semiconductor. Investigation shows that the high ferromagnet exchange energy is useful in enhancing SIN and TMR in the magnetic double tunnel junctions with asymmetric potential barrier, and can enhance SIE more than TMR. the increase of the ferromagnet exchange energy
作者 杨军 武文远 龚艳春 戴斌飞 陈蓉
机构地区 解放军理工大学理学院
出处 《解放军理工大学学报（自然科学版）》 EI 北大核心 2009年第4期375-378,共4页 Journal of PLA University of Science and Technology(Natural Science Edition)
基金 国家自然科学基金资助项目(90403011)
关键词 非对称势垒 自旋注入效率 隧穿磁电阻 铁磁交换能 asymmetric potential barrier spin injection efficiency tunneling magnetore resistance ferro-magnet exchange energy
分类号 O469 [理学—凝聚态物理]
  • 相关文献

参考文献16

  • 1WOLF S A,AHALOM D D,BUHRMAN R A, et al. Spintronies:A spin-based electronics vision for the future[J]. Science, 2001 (294) : 1488-1495.
  • 2MATHON J, UMERSKI A, Theory of tunneling magnetoresistance in a junction with a nonmagnetic metallic interlayer [J]. Phys Rev B, 1999(60) :1117- 1121.
  • 3MATTANA R, GEORGE J M, JAFFRES H,et al. Electrical detection of spin accumulation in a p-type GaAs quantum well[J]. Phys Rev Lett. 2003(90): 166601(1-5).
  • 4YAMASHITA T, IMAMURA H, TAKAHASHI S, et al, Andreev reflection in ferromagnet/superconductor/ferromagnet double junction systems, [J]. Phys Rev B, 2003(67) :094515-094523.
  • 5ZHU H J, RAMSTEINER M, KKSITAL H, et al. Room-Temperature spin injection from Fe into GaAs [J]. PYHS Rev Lett, 2001(87) : 016601-016605.
  • 6HANBICKI A T, JONKER B T, KIOSEOGLOU G G, et al. Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor[J]. Appl Phys Lett,2002(80) :1240-1242.
  • 7SCHMIT G,FERRAND D,MOLENKAMP L W, et al. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor [J]. Phys Rev B,2002(62) :R4790-R4793.
  • 8FERT A,JAFFERS H. Conditions for efficient spin injection from a ferromagnetic metal into a semicon- ductor[J]. Phys Rev B, 2001(64) : 184420-184429.
  • 9SMITH D L, SILVER R N. Electrical spin injection into semiconductors[J]. Phys Rev B 2001 (64): 045323-045331.
  • 10ALBRECHT J D,SMITH D L. Electron spin injection at a Schottky contact[J]. Phys Rev B 2002 (66):113303-113307.

二级参考文献45

  • 1[1]Baibich M N,Broto J M, Fert A, Nguyeu Van Dau F,Petroff F, Eitenne P, Creuzet G, Friederich A and Chazelas J 1988 Phys.Rev.Lett.61 2472
  • 2[2]Xiao G, Jiang J S and Chien C C 1992 Phys.Rev.Lett. 68 3749
  • 3[3]Berkowitg A E, Mitchell J R, Carey M J, Young A P, Zhang S, Spada F E, Parkar F T, Hutten A and Thomas G 1992 %Phys.Rev.Lett.%68 3745
  • 4[5]Jin S, Tiefel T H, McCormack M, Fastnact R A, Ramesh R and Chen L H 1994 Science 264 413 Jin S et al 1994 J.Appl.Phys. 76 6929
  • 5[6]Miyazaki T, Tezuka N 1995 %J.Magn.Magn.Mater.% 139 L231
  • 6[7]Moodera J S, Kinder L R, Wong T M and Meservey R 1995 %Phys.Rev.Lett.% 74 3273Moodera J S and Kinder L R 1996 %J.Appl.Phys.% 79 4724
  • 7[8]Lu Y, Li X W, Gong G Q, Xiao G, Gupta A, Lecoeur P, Sun J Z, Wang Y Y and Dravid V P 1996 Phys.Rev. B 54 8357
  • 8[11]Julliere M 1975 %Phys.Lett.%A 54 225
  • 9[12]Gu R Y, Xing D Y and Dong J 1996 %J.Appl.Phys.% 80 7163
  • 10[13]Milner A, Gerber A, Groisman B, Karpovsky M and Gladkikh A 1996 %Phys.Lett.% 76 475

共引文献15

同被引文献16

  • 1杨军,汪军.自旋注入效率的电学探测[J].解放军理工大学学报（自然科学版）,2005,6(6):609-612. 被引量：6
  • 2Nogueira F S, Bennemann K H. Spin Josephson effect in ferromagnet/ferromagnet tunnel junctions [ J ]. Eurphys Lett, 2004,620 (67): 1 105- 1 109.
  • 3GUPTA T K, CARLSON W G. Barrier voltage and its effect on stability of ZnO varistors[J].Journal of Applied Physics, 1982,53(11) :7401-7409.
  • 4KANAI H, IMAI M. A high-resolution transmission electron microscope study of zinc oxide varistors[J]. Journal of Materials Science, 1985, 20 (11) : 3957- 3966.
  • 5GUPTA T K,CARLSON W G. A grain-boundary de- fect model for instability of ZnO varistors[J]. Journal of Materials Science, 1985,20 : 3487.
  • 6SATO K, TAKADA Y, MAEKAW H a. Electrical conduction of ZnO varistors under continuous DC stress[J].ournal of Applied Physics, 1980, 19 (5) : 909-917.
  • 7EDAK, IGA A, MATSUOKA M. Degradation mechanism of non-ohmic zinc oxide ceramics[J]. Jour- nal of Applied Physics, 1980,51(5):2678-2684.
  • 8郭征新.ZnO压敏电阻器性能的改进[D].西安:西安交通大学,1992.
  • 9王振林,李盛涛.氧化锌压敏陶瓷制造及其应用[M].北京:科学出版社,2009.
  • 10谭宜成,刘子玉,刘辅宜,等.非欧姆氧化锌陶瓷的界面态和晶界势垒模型的探讨[J].西安交通大学学报,1998,22(3):115-119.

引证文献2

二级引证文献5

解放军理工大学学报（自然科学版）
2009年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部