摘要
理论分析与实验验证表明,纳米金刚石磨料磁流变抛光材料去除机理是塑性剪切去除。在KDMRF-1000F磁流变抛光机床上进行工艺实验,研究抛光轮与工件表面的间隙、抛光轮转速、磁场强度对峰值去除效率和表面粗糙度的影响。工艺实验表明,去除函数具有良好的稳定性和重复性,2.5h以内峰值去除效率稳定在±0.3%以内,体积去除效率稳定在±0.5%以内。直径202mm(有效口径95%)的HIP SiC平面镜采用子孔径拼接测量方法,经过磁流变粗抛(30h)和精抛(9h)后,面形误差PV值0.13μm,RMS值0.012μm,表面粗糙度RMS值2.439nm。
Material removal mechanism in MRF process by nano-sized diamond abrasives is proved to be a plastic shear removal. Process experiments showed the relationship between polishing parameters （rotation speed, gap between polishing wheel and work piece, and intensity of magnetic field） and peak removal rate or surface roughness. Polishing spot is proved to be stable and repeatable. Within 2.5h, the change of peak removal rate is below ＋0.3% and the change of volume removal rate is below ＋0.5%. One HIP SiC fiat （202mm in diameter） is polished with KDMRF-1000F polishing machine and KDMRW-3 water-based MR fluids. After rough polish （3Oh） and finishing polish （9h）, its surface form accuracy peak-to-valley （PV） is 0. 13um, root-mean-square （RMS） is 0.012um and roughness RMS is 2.439nm.
出处
《国防科技大学学报》
EI
CAS
CSCD
北大核心
2009年第4期25-30,共6页
Journal of National University of Defense Technology
基金
国家自然科学基金资助项目(50775215
50875256)
国家部委基金资助项目(9140A18070108KG0147)
关键词
磁流变抛光
去除机理
纳米金刚石
工艺
MRF
removal mechanism
nano-sized diamond
process and arts
