摘要
首次报导了采用Ｓｉ３Ｎ４、硅凝胶钝化／保护的微带线低电感输出的全固态ＳＩ－ＧａＡｓ高压亚纳秒光电导开关的研究结果，该器件的耐压强度为３５ｋＶ／ｃｍ，具有理想的暗态伏安特性；典型的电流脉冲上升时间为２００ｐｓ，电流达１００Ａ．并在实验中观测到典型的高倍增（Ｌｏｃｋｏｎ效应）现象．
The high gain ultra fast photoconductive semiconductor switches (PCSS's) fabricated with SI GaAs coated by all solid insulation protection technique has been reported in this paper. The largest hold off strength of 35 kV/cm of fabricated switches was obtained. We have used PCSS's to switch voltages as high as 30 kV/cm and currents about 100 A ,and obtained a rise time as fast as 200 ps in the initiation of lock on .By use of all solid technique to fabrication of high gain GaAs switch made the device structure more simple and more practical.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1998年第8期19-23,110,共6页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金
