摘要
利用直流磁控溅射技术制备了三元硼碳氮(BCN)薄膜,通过改变靶功率(70 W和210 W)和基体偏压(-50V~-400 V)得到不同成分和组织结构的薄膜。采用X射线光电子能谱仪和傅立叶红外光谱仪分析了薄膜的成分和结构。结果表明:靶功率增加使得薄膜成分发生改变,而基体偏压改变对薄膜中各元素的原子百分含量几乎没有影响;基体偏压的增加会引起高能粒子对基体的轰击作用增强,有利于薄膜中B-N键的形成,而且轰击能量越高越有利于sp^3杂化的B-N键形成。
BCN films were deposited by DC magnetron sputtering, and the films with different contents and structures were prepared by changing target power and bias in this paper. The composition and bonding structure of BCN films were studied by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The results indicate that the element contents of BCN films change with the increasing of the target power, and the change of bias makes no difference to element contents of films. The effect of bombardment by energetic particle is enhanced, and the formation of B-N bonding is preferential with the increasing of the bias. The increasing of bombardment energy favor the formation of sp3 B-N bonding.
出处
《中国表面工程》
EI
CAS
CSCD
北大核心
2009年第4期26-30,共5页
China Surface Engineering