摘要
分析了大功率晶体管（ＧＴＲ）饱和区伏安特性，测量了不同驱动条件和工作温度下ＧＴＲ的集电极压降和集电极电流的关系．结果表明，存在一个饱和压降阈值，超过这个阈值后，过流将产生．据此设计了一种快速有效的过流保护电路．
In this paper the dependence of the saturation voltage of the giant transistor (GTR) on the collector current is analyzed and tested. The measurement of power modules SQD50AB100 shows that there exists a threshold of V CES ,over which V CES begins to increase rapidly as the collector current further increases. Based on experimental results, an over_current protection circuit was successfully designed and used in a power revertor device.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
1998年第8期54-57,共4页
Journal of South China University of Technology(Natural Science Edition)
关键词
大功率晶体管
饱和压降
过流保护
power transistor
saturation voltage
over_current protection
