摘要
研究了硫化温度及硫化时间对合成ＦｅＳ２薄膜材料的影响规律。结果表明，在４００—６００℃对磁控溅射制备的纯Ｆｅ膜硫化１０—３０ｈ，可以得到接近等轴状且具有一定择优取向的多晶ＦｅＳ２薄膜。在４００℃硫化１０ｈ条件下，ＦｅＳ２即能够以较快速率生成，随硫化温度升高或硫化时间延长，ＦｅＳ２生成速率便不再明显上升。
The polycrystalline FeS 2 thin films are prepared by thermal sulfidation of iron layers sputtered on glass substrates.In this paper,the effect of the sulfidation process (sulfidation temperature and annealing time)on the formation of FeS 2 thin films has been investigated.The test results show that the equiaxed FeS 2 grains in the preferred orientation can be synthesized when the sulfidation temperature is in 400—600℃ and the annealing time in 10—30h.There is a quicker growth of FeS 2 crystal if the iron layers is sulfurated for 10 h at 400℃. Above 400℃ and 10 h the rate to form FeS 2 crystal increases insignificantly with the increase of sulfidation temperature or annealing time.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1998年第3期322-326,共5页
Acta Energiae Solaris Sinica
