摘要
使用对Zn2N3:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23μB—0.61μB.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好.
Mn doped ZnO films with and without N eodoping have been fabricated by oxidative annealing of sputtered Zn： Mn and Zn2N3 ：Mn films on silicon substrates in flowing O2 ambient. It was found that the ZnO：Mn films show very weak ferromagnetic behavior, while for those with N codoping, significant ferromagnetism with a moderate saturation magnetization of about 0.23--0.61 ,us per Mn2＋ ion was observed at room temperature. It suggests that significant ferromagnetism in ZnO： Mn films could be activated by N codoping. The results indicate that holes are favorable for ferromagnetic ordering of the doped Mn2＋ ions in ZnO, in agreement with the recent theoretical studies.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第8期5763-5767,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:10804017,50802041)
教育部新世纪优秀人才支持计划(批准号: NCET-05-0452)资助的课题~~
关键词
磁性半导体
受主掺杂
空穴媒介的铁磁性
magnetic semiconductor, p-type conduction, hole-mediated ferromagnetism
