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Effect of the back surface topography on the efficiency in silicon solar cells 被引量：1

Effect of the back surface topography on the efficiency in silicon solar cells
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摘要 Different processes are used on the back surface of silicon wafers to form cells falling into three groups：textured, planar, and sawed-off pyramid back surface.The characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are measured.All these parameters of the planar back surface cells are the best.The FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are lower.The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells.The cross-section scanning electron microscopy（SEM） pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact.The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram.It is shown in an external quantum efficiency（EQE） diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response. Different processes are used on the back surface of silicon wafers to form cells falling into three groups：textured, planar, and sawed-off pyramid back surface.The characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are measured.All these parameters of the planar back surface cells are the best.The FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are lower.The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells.The cross-section scanning electron microscopy（SEM） pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact.The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram.It is shown in an external quantum efficiency（EQE） diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.
作者 郭爱娟 叶发敏 郭里辉 纪冬 冯仕猛
机构地区 Solar Energy Institute Department of Physics Shanghai Topsolar Green Energy Co.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第7期48-50,共3页 半导体学报（英文版）
关键词 planar back surface aluminum-silicon contact back surface field planar back surface aluminum-silicon contact back surface field
分类号 TM914.41 [电气工程—电力电子与电力传动]
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参考文献10

  • 1Meemongkolkiat V,Hilali M,Rohatgi A.Investigation of RTP and belt fired screen printed Al-BSF on textured and planar back surfaces of silicon solar cells[].Proceedings of the rd World Conference on Photovoltaic Energy Conversion.2003
  • 2Liu Enke,Zhu Bingsheng,Luo Jinsheng.Semiconductor physics[]..1998
  • 3Vazsonyi E,Clercq K De,Einhaus R,et al.Improved Anisotropic Etching Process for Industrial Texturing of Silicon Solar Cells[].Solar Energy Materials.1999
  • 4KING D L,BUCK ME.Experimental optimization of an anisotropic etching process for random texturization of ??silicon solar cells. [C.][].Proceedings of nd IEEE Photovoltaic Specialist Conference.1991
  • 5P. Lolgen,C. Leguijt,J.A. Eikelboom etc.Aluminum back-surface field doping profiles with surface recombination velocities below 200cm/s[].IEEE Proceedings of rd Photovoltaic Specialist Conference.1993
  • 6Joshi S M,,G sele U M,Tan T Y.Improvement of minority carrier diffusion length in Si by Al gettering[].Journal of Applied Physics.1995
  • 7Fossum J G,Nasby R D,Pao S C.Physics underlying the performance of back-surface-field solar cells[].IEEE Transactions on Electron Devices.1980
  • 8Martin A. Green.General solar cell curve factors including the effects of ideality factor, temperature and series resistance[].Solid State Electronics.1977
  • 9Green M.A.Solar Cells Operating Principles Technology and System applications[]..1971
  • 10J. del Alamo,J. Eguren and A. Luque.Operating limits of Al-alloyed high-low junctions for BSF solar cells[].Solid State Electronics.1981

同被引文献20

  • 1Chog B, Thomas A, Chong T K, et al. Light Trapping Efficiency Comparison of Si Solar Cell Textures Using Spectral Photoluminescence [J]. Optics Express, 2015, 23(7): 391-400.
  • 2Zhou Z Q, Wang L X, Shi W, et al. A Synergetic Application of Surface Plasmon and Field Effect to Improve Si Solar Cell Performance [J]. Nanotechnology, 2016, 27(14): 145203.
  • 3Petermann J H, Zielke D, Schmidt J, et al. 19 %-efficient and 43-p_m-thick Crystalline Si Solar Cell From Layer Transfer Using Porous Silicon [J]. Progressin Photovoltaics Research & Applications, 2012, 20(1): 1-5.
  • 4Green M A. The path to 25 % Silicon Solar Cell Efficiency: History of Silicon Cell Evolution[J]. Progress in Photovoltaics Research & Applications, 2009, 17(3): 183-189.
  • 5Gu X, Yu X, Xu J, et al. Towards Thinner and Low Bowing Silicon Solar Cells: Form the Boron and Alumimun Co-doped Back Surface Field with Thinner Metallization Film[J]. Progress in Photovoltaics: Research and Applications, 2013, 21(4): 456-461.
  • 6Goetzberger A, Luther J, Willeke G. Solar cells: Past, Present, Future[J]. Solar Energy Materials & Solar Cells, 2002, 74(1-4): 1-11.
  • 7Tool C J J, Burgers A R, Manshanden P, et al. Influence of wafer thickness on the performance of multicrystalline Si solar cells: an experimental study [J]. Progress in Photovoltaics Research & Applications, 2002, 10(4): 279-291.
  • 8Hartley O N, Russell R, Heasman K C, et al. In Investigation of Thin Aluminium Films on the Rear of Monocrystalline Silicon Solar Cells for Back Surface Field Formation , Photovoltaic Specialists Conference , 2002. Conference Record of the Twenty-Ninth IEEE, 2002:118-121.
  • 9Davis K O, Jiang K, Demberger C, et al. Investigation of the Internal Back Reflectance of Rear-Side Dielectric Stacks for c-Si Solar Cells[J]. IEEE Journal ofPhotovoltaics, 2013, 3(2): 641-648.
  • 10Thorstensen J, Foss S E, Gjessing J. Light-trapping Properties of Patch Textures Created Using Laser Assisted Texturing[J] . Progress in Photovoltaics: Research andApplications, 2014, 22(9): 993-1000.

引证文献1

Journal of Semiconductors
2009年 第7期

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