摘要
An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO3 heterojunctions is reported. The current-voltage curves of these junctions show hysteresis. Multi-resistance states are realized by applying voltage pulses with different amplitudes, and the resistance switching effect is more remarkable at low temperatures. The junction capacitance decreases dramatically with increasing frequency. Analysis of the results suggests that the trapping-detrapping process plays an important role in the resistance switching effect.
An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO3 heterojunctions is reported. The current-voltage curves of these junctions show hysteresis. Multi-resistance states are realized by applying voltage pulses with different amplitudes, and the resistance switching effect is more remarkable at low temperatures. The junction capacitance decreases dramatically with increasing frequency. Analysis of the results suggests that the trapping-detrapping process plays an important role in the resistance switching effect.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 50425205 and 10674079, and the National Basic Research Program of China under Grant No 2006CB921502.
