摘要
在调制掺杂（Si）Al0.27Ga0.73As／GaAs多量子阱结构的光致发光谱中，观测到一个强发光峰及多个低能弱发光峰．强发光峰是量子阱中基态电子与重空穴复合，即激子复合形成的，其低温发光线形可用Voigt函数拟合.低能弱峰是势垒层Al0.27Ga0.73As中DX中心能级上的电子跃迁到SiAs原子而引起，由此确定DX中心有四个能级，其激活能分别为0．35、037、0．39、0．
The photolumenescence spectra of modulation doing GaAs/Al0.27Ga0.73As multiquantum wellstructure were measured. There are a strong luminescence peak and several low energy weak peaksin the luminescence spectra. The strong one arises from transition of electron at ground state inwell to heavy hole and these low energy weak peaks may be attributed to transition of electron atDX centers in Al0.27Gh0.73As to SiAs atoms. On this view, we can come to the conclusion thatthe DX centers in St-doped AlGaAs appear as four levels and their activation energies are about0.35eV, 0.37eV, 0.39eV and 0.41eV, respectively.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第3期345-349,共5页
Journal of Inorganic Materials
关键词
调制掺杂
多量子阱
光致发光
半导体
结构
modulation doping, GaAs/AlGaAs multiquantum well, phototuminescence
