摘要
本文探讨了掺Ｓｉ对Ｂ４Ｃ半导体的热电性能（包括电导率、热导率及Ｓｅｅｂｅｃｋ系数）及显微结构的影响，应用小极化子跃迁机制。
Abstract The effect of doping Si in B 4C on the overall thermoelectric properties including electric conductivity, thermal conductivity and Seebeck coefficient as well as the microstructure of B 4C semiconductor is investigated. In terms of the small polaron hopping mechanism, the transport behavior of the Si doped B 4C semiconductor is discussed.
基金
国家教委跨世纪优秀人才基金
